Electrical characterization of liquid-phase-deposited SiON on (NH4 )2 S-treated GaAs-Reference-Cited by-同舟云学术

Electrical characterization of liquid-phase-deposited SiON on (NH4 )2 S-treated GaAs

Published:2013-05-13 Issue:9 Volume:210 Page:1762-1767
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yen Chih-Feng¹,Lee Jung-Chan²,Cheng Chi-Hsuan²,Lee Ming-Kwei¹

Affiliation:

1. Department of Electronic Engineering; Chung Yuan Christian University; Chung Li City 32023 Taiwan

2. Department of Electrical Engineering; National Sun Yat-sen University; Kaohsiung 80424 Taiwan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201228592/fullpdf

Reference18 articles.

1. C‐V Characteristics of Al / SiON / GaAs MIS Systems

2. Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

3. Study of PECVD SiOxNy films dielectric properties with different nitrogen concentration utilizing MOS capacitors

4. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

5. Kink defects and Fermi level pinning on (2×4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and x-ray photoelectron spectroscopy

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1. High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments;Journal of Electronic Materials;2016-05-11