X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100970
Reference19 articles.
1. Interfacial constraints on device performance
2. Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide
3. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
4. Nearly ideal electronic properties of sulfide coated GaAs surfaces
5. Near‐ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth
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