Interface‐Induced High Responsivity in Hybrid Graphene/GaAs Photodetector-Reference-Cited by-同舟云学术

Interface‐Induced High Responsivity in Hybrid Graphene/GaAs Photodetector

Published:2020-02-16 Issue:8 Volume:8 Page:1901741
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Tian Huijun¹²,Hu Anqi¹,Liu Qiaoli³,He Xiaoying¹,Guo Xia¹^ORCID

Affiliation:

1. State Key Laboratory for Information Photonics and Optical CommunicationsSchool of Electronic EngineeringBeijing Key Laboratory of Work Safety Intelligent MonitoringBeijing University of Posts and Telecommunications Beijing 100876 P. R. China

2. Institute of Laser EngineeringBeijing University of Technology Beijing 100124 P. R. China

3. School of InformationBeijing University of Technology Beijing 100124 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901741

Reference43 articles.

1. Fine Structure Constant Defines Visual Transparency of Graphene

2. A roadmap for graphene

3. Broadband high photoresponse from pure monolayer graphene photodetector

4. In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared

5. Graphene–semiconductor heterojunction sheds light on emerging photovoltaics

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