Extremely high hole concentration in GaAs by dual Mg/As implants
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341173
Reference13 articles.
1. Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp
2. Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors
3. Shallow beryllium implantation in GaAs annealed by rapid thermal annealing
4. Formation ofp‐type GaAs layers using Mg+implantation and capless rapid thermal annealing
5. High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carbon and group II acceptor coimplantation in GaAs;Journal of Applied Physics;1998-11
2. Enhancement of Mg activation in AlGaAs by Mg+Ar and Mg+P dual ion implantation;Journal of Applied Physics;1997-06
3. n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7);Journal of Applied Physics;1996-08-15
4. Coimplantation of carbon and group II acceptors in GaAs;Applied Physics Letters;1996-02-19
5. Ion Implantation For High Performance Ill-V Jfets And Hfets;MRS Proceedings;1996
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