Shallow beryllium implantation in GaAs annealed by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95722
Reference11 articles.
1. Beryllium and sulfur ion-implanted profiles in gaas
2. Annealing Characteristics of Be Ion Implanted GaAs
3. Electrical profiling and optical activation studies of Be‐implanted GaAs
4. Spectroscopic ellipsometry and Raman scattering study of the annealing behavior of Be‐implanted GaAs
5. Infrared rapid annealing of Zn‐implanted GaAs
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1. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations;Journal of Applied Physics;2014-09-14
2. A computational study of ion-implanted beryllium diffusion in gallium arsenide;Computational Materials Science;2008-10
3. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
4. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995
5. High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignment;IEEE Electron Device Letters;1991-10
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