Beryllium and sulfur ion-implanted profiles in gaas

Author:

Comas James,Plew Larry

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. W. S. Johnson and J. F. Gibbons,Projected Range Sta- tistics in Semiconductors, Stanford University Press, 1969.

3. I. Manning and G. P. Mueller, Computer Phys. Commun.7, 85 (1970).

4. R. P. Lyons, J. E. Ehret and Y. S. Park, Bull. Am. Phys. Soc.20, 318 (1975).

5. R. G. Hunsperger and N. Hirsch, Solid State Electronics18, 349 (1975).

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1. Role of vacancies and implantation defects in GaAs/AlAs superlattice intermixing;Journal of Materials Science;1991-12

2. Be‐ion implantation in AlxGa1−xAs;Journal of Applied Physics;1986-10-15

3. Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices;Japanese Journal of Applied Physics;1985-11-20

4. Shallow beryllium implantation in GaAs annealed by rapid thermal annealing;Applied Physics Letters;1985-01-15

5. Sputter Depth Profiling of Microelectronic Structures;Journal of The Electrochemical Society;1983-05-01

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