Annealing Characteristics of Be Ion Implanted GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/17/i=10/a=1845/pdf
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transmission Electron Microscopy of Be Implanted Si-Doped GaAs;physica status solidi (a);2000-12
2. Role of vacancies and implantation defects in GaAs/AlAs superlattice intermixing;Journal of Materials Science;1991-12
3. SUPREM 3.5-process modeling of GaAs integrated circuit technology;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1989
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Raman scattering evaluation of lattice damage and electrical activity in Be‐implanted GaAs;Journal of Applied Physics;1987-11
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