Coimplantation of carbon and group II acceptors in GaAs

Author:

Morton R.,Lau S. S.,Poker D. B.,Chu P. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference16 articles.

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors;Journal of Electronic Materials;1998-12

2. Carbon and group II acceptor coimplantation in GaAs;Journal of Applied Physics;1998-11

3. Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05

4. Photoluminescence characterization of dually Cd+ and N+ ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01

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