Coimplantation of carbon and group II acceptors in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115737
Reference16 articles.
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors;Journal of Electronic Materials;1998-12
2. Carbon and group II acceptor coimplantation in GaAs;Journal of Applied Physics;1998-11
3. Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
4. Photoluminescence characterization of dually Cd+ and N+ ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01
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