Enhancement of Mg activation in AlGaAs by Mg+Ar and Mg+P dual ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365277
Reference11 articles.
1. Annealing Behavior of Be- and Mg-Implants in GaAs
2. Carbon + argon co‐implantation for GaAsp‐channel metal‐semiconductor field‐effect transistors
3. Coimplantation of carbon implanted GaAs: Energy and dose rate observations
4. Carbon implantation in AlxGa1−xAs
5. Rapid thermal annealing of Mg++As+dual implants in GaAs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Zinc and group V element co-implantation in indium phosphide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
2. Interface property of Mg-based dual ion implanted p+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs;Applied Surface Science;1997-06
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