Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation-Reference-Cited by-同舟云学术

Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

Published:2020-11-01 Issue:11 Volume:8 Page:111105
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Yakimov E. B.¹²^ORCID,Polyakov A. Y.²,Shchemerov I. V.²,Smirnov N. B.²^ORCID,Vasilev A. A.²,Vergeles P. S.¹^ORCID,Yakimov E. E.¹,Chernykh A. V.²^ORCID,Shikoh A. S.²,Ren F.³^ORCID,Pearton S. J.⁴^ORCID

Affiliation:

1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow 142432, Russia

2. National University of Science and Technology MISiS, Moscow 119049, Russia

3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Russian State Task

National Science Foundation

Defense Threat Reduction Agency

Russian Ministry of Education and Science

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0030105

Reference29 articles.

1. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

2. A review of Ga2O3materials, processing, and devices

3. Gallium oxide solar-blind ultraviolet photodetectors: a review

4. Review of gallium-oxide-based solar-blind ultraviolet photodetectors

5. High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process

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