The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment-Reference-Cited by-同舟云学术

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Published:2020-01-14 Issue:2 Volume:127 Page:025704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Renz A. B.¹^ORCID,Shah V. A.¹,Vavasour O. J.¹^ORCID,Bonyadi Y.¹,Li F.¹,Dai T.¹,Baker G. W. C.¹,Hindmarsh S.²,Han Y.²,Walker M.²,Sharma Y.³,Liu Y.⁴,Raghothamachar B.⁴,Dudley M.⁴,Mawby P. A.¹^ORCID,Gammon P. M.¹

Affiliation:

1. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

2. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

3. Dynex Semiconductor Ltd., Lincoln LN6 3LF, United Kingdom

4. Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11794, USA

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5133739

Reference25 articles.

1. Fundamentals of Silicon Carbide Technology

2. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

3. Review of Silicon Carbide Power Devices and Their Applications

4. Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

5. Electron transport at metal-semiconductor interfaces: General theory

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