3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance-Reference-Cited by-同舟云学术

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3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Published:2024-09 Issue:9 Volume:71 Page:5573-5580
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Melnyk Kyrylo¹^ORCID,Renz Arne Benjamin¹^ORCID,Cao Qinze¹^ORCID,Gammon Peter Michael¹^ORCID,Lophitis Neophytos²,Maresca Luca³^ORCID,Irace Andrea³^ORCID,Nistor Iulian⁴^ORCID,Rahimo Munaf⁴^ORCID,Antoniou Marina¹^ORCID

Affiliation:

1. School of Engineering, The University of Warwick, Coventry, U.K.

2. Faculty of Engineering and Technology, Cyprus University of Tehcnology, Limassol, Cyprus

3. Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy

4. mqSemi AG, Zug, Switzerland

Funder

Royal Society through AdvanSiC Project

European Union’s Horizon Europe Program through AdvanSiC Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10623598.pdf?arnumber=10623598

Reference20 articles.

1. Analysis of SI IGBT and SIC MOSFET three phase inverter technologies in HEV, P-HEV and EV applications

2. The Optimization of 3.3 kV 4H-SiC JBS Diodes

3. Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

4. 4H-SiC Super-Junction JFET: Design and Experimental Demonstration

5. Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

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