Solid phase epitaxy of diamond cubic SnxGe1−xalloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363397
Reference28 articles.
1. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
2. Synthesis of Si1−yCyalloys by molecular beam epitaxy
3. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
4. Metastable SiGeC formation by solid phase epitaxy
5. Synthesis of dislocation free Siy(SnxC1−x)1−yalloys by molecular beam deposition and solid phase epitaxy
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2. High Sn-concentration (~8%) GeSn by low-temperature (~150°C) solid-phase epitaxy of a-GeSn/c-Ge;Thin Solid Films;2016-03
3. Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator;ECS Journal of Solid State Science and Technology;2015-12-02
4. Germanium tin light emitters on silicon;Japanese Journal of Applied Physics;2015-03-27
5. Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy;Japanese Journal of Applied Physics;2015-03-11
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