Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy-Reference-Cited by-同舟云学术

Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

Published:2015-03-11 Issue:4S Volume:54 Page:04DA07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maeda Tatsuro,Jevasuwan Wipakorn,Hattori Hiroyuki,Uchida Noriyuki,Miura Shu,Tanaka Masatoshi,Santos Nuno D. M.,Vantomme André,Locquet Jean-Pierre,Lieten Ruben R.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DA07/pdf

Reference25 articles.

1. Possibility of increased mobility in Ge-Sn alloy system

2. Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors

3. GeSn technology: Extending the Ge electronics roadmap

4. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

5. Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

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