Investigation of plasma hydrogenation and trapping mechanism for layer transfer-Reference-Cited by-同舟云学术

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Published:2005-01-17 Issue:3 Volume:86 Page:031904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Peng,Chu Paul K.,Höchbauer T.,Lee J.-K.,Nastasi M.,Buca D.,Mantl S.,Loo R.,Caymax M.,Alford T.,Mayer J. W.,Theodore N. David,Cai M.,Schmidt B.,Lau S. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1852087

Reference15 articles.

1. Silicon on insulator material technology

2. Layer splitting in Si by H+He ion co-implantation: Channeling effect limitation at low energy

3. Mechanically induced Si layer transfer in hydrogen-implanted Si wafers

4. Orientation dependence of blistering in H-implanted Si

5. Thinner Silicon-on-Insulator Using Plasma Hydrogenation

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