Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures-Reference-Cited by-同舟云学术

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Published:2014-08-28 Issue:8 Volume:116 Page:083702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chicot G.¹²,Fiori A.¹²,Volpe P. N.³,Tran Thi T. N.¹²,Gerbedoen J. C.⁴,Bousquet J.¹²,Alegre M. P.⁵,Piñero J. C.⁵,Araújo D.⁵,Jomard F.⁶,Soltani A.⁴,De Jaeger J. C.⁴,Morse J.⁷,Härtwig J.⁷,Tranchant N.³,Mer-Calfati C.³,Arnault J. C.³,Delahaye J.¹²,Grenet T.¹²,Eon D.¹²,Omnès F.¹²,Pernot J.¹²⁸,Bustarret E.¹²

Affiliation:

1. Université Grenoble Alpes, Institut NEEL, 38042 Grenoble, France

2. CNRS, Institut NEEL, 38042 Grenoble, France

3. CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette, France

4. IEMN, UMR-CNRS 8520, Avenue Poincaré, Université de Lille 1, 59652 Villeneuve d'Ascq, France

5. Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain

6. Groupe d'Étude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 Avenue des États-Unis, 78035 Versailles Cedex, France

7. European Synchrotron Radiation Facility, 38043 Grenoble, France

8. Institut Universitaire de France, 103 boulevard Saint Michel, 75005 Paris, France

Funder

Agence Nationale de la Recherche (L' Agence Nationale de la Recherche)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893186

Reference44 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Activation energy in low compensated homoepitaxial boron-doped diamond films

3. High hole mobility in boron doped diamond for power device applications

4. Hall electron mobility in diamond

5. Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement

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