High hole mobility in boron doped diamond for power device applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3086397
Reference18 articles.
1. High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
2. Hall Mobility and Scattering Mechanism of Holes in Boron-Doped Homoepitaxial Chemical Vapor Deposition Diamond Thin Films
3. Highly efficient doping of boron into high-quality homoepitaxial diamond films
4. Characterization of boron doped diamond epilayers grown in a NIRIM type reactor
5. Effect of oxygen on the cathodoluminescence signal from excitons, impurities and structural defects in homoepitaxial (100) diamond films
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