Characterization ofn‐type regions in GaAs formed by silicon fluoride molecular ion implantations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344002
Reference5 articles.
1. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn
2. Characterization of ion‐implanted GaAs using cathodoluminescence
3. SiFx and SFx molecular ion implantations into GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of p and n doping on neutral impurity and dielectric cap induced quantum well intermixing in GaAs/AlGaAs structures;Semiconductor Science and Technology;1997-01-01
2. Intermixing of MeV ion-implanted and annealed AlGaAs/GaAs superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
3. Ion implantation in gallium arsenide MESFET technology;IEEE Transactions on Electron Devices;1992
4. Shallow Ion Implantation in Gallium Arsenide Mesfet Technology;MRS Proceedings;1991
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