Characterization of ion‐implanted GaAs using cathodoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331910
Reference13 articles.
1. Depth‐resolved cathodoluminescence in undamaged and ion‐implanted GaAs, ZnS, and CdS
2. Depth‐resolved cathodoluminescence of ion‐implanted layers in zinc oxide
3. Diffusion effects in electron bombardment induced processes
4. Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation
5. Measurement of Diffusion Lengths in p‐Type Gallium Arsenide by Electron Beam Excitation
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3. Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2001-04-30
4. Annealing kinetics of defects of ion-implanted and furnace-annealed silicon layers: thermodynamic approach;Semiconductor Science and Technology;1992-11-01
5. Characterization ofn‐type regions in GaAs formed by silicon fluoride molecular ion implantations;Journal of Applied Physics;1989-11
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