Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy

Published:2001-04-30 Issue:Part 1, No. 4B Volume:40 Page:2769-2774
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishikawa Fumitaro,Hirama Atsushi,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 71% wall-plug efficiency from 780 nm-emitting laser diode with GaAsP quantum well;Optics & Laser Technology;2024-01

2. Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure;Semiconductor Science and Technology;2009-08-25

3. Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems;Journal de Physique IV (Proceedings);2006-03

4. Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures;Crystal Research and Technology;2005-11

5. Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate;Applied Physics Letters;2005-05-30

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