Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations
2. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
3. Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor
4. 29.5%‐efficient GaInP/GaAs tandem solar cells
5. Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation
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