Affiliation:
1. Semiconductors Group, Institute of Science and High Technology and Environmental Sciences, Graduate University of Advanced Technology, Kerman, Iran
2. Faculty of Engineering, Shahid Beheshti University, Tehran, Iran
Abstract
Background:
Among the parameters that play an important role in describing the performance
of many devices is carrier mobility which is a criterion for the easy movement in semiconductor
crystals.
Objective:
The effect of carrier mobility on the performance characteristics of InGaN quantum well
vertical-cavity surface-emitting laser was analytically investigated.
Methods:
By solving the Poisson’s equation, current density equation, charge concentration continuity
equation and carrier and photon rate equations, the variation of current density and carrier density with
respect to the position and time and the effects of carrier mobility and temperature on these parameters
were investigated. Furthermore, the effect of mobility on the variation of output power versus the injection
current and on the time variation of photon and carrier density and the output power was investigated.
Results:
By increasing the carrier mobility, the threshold current is reduced and the output power is
increased. In studying the effect of temperature on the desired parameters, the variation of carrier density
with respect to time and position was affected by the temperature change. This phenomenon is due
to the dependence of these parameters on the diffusion coefficients and consequently on the mobility
of the carriers and the dependence of mobility on temperature.
Conclusions:
The output power increased, and the time delay in accruing the laser decreased. Consequently,
the carrier recombination increased, further resulting in a rapid laser operation.
Funder
Graduate University of Advanced Technology Kemran, Iran
Publisher
Bentham Science Publishers Ltd.
Subject
Building and Construction
Reference26 articles.
1. Bahauddin S.M.; Sumana F.D.; Hossain Md.; R; Uddin, Md A; Mahmood, Z H Theoretical analysis on quantum well at undoped GaN/InxGa1-xN/GaN heterostructure interface 2010,1283-1286
2. Biswas D.; Kumar S.; Das T.; Band offsets of InxGa1-xN/GaN quantum wells reestimated. Thin Solid Films 2007,515(10),4488-4491
3. Trivellin N.; Meneghini M.; Zanoni E.; Meneghesso G.; Orita K.; Yuri M.; Tanaka T.; Ueda D.; Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate. Phys Status Solidi, A Appl Mater Sci 2010,207(1),41-44
4. Kundu J.; Sarkar C.K.; Mallick P.S.; Calculation of electron mobility and effect of dislocation scattering in GaN. Semicond Phys. Quan-tum Elect 2007,10,1-3
5. Hai G.Q.; Studart N.; Peeters F.M.; Koenraad P.M.; Wolter J.H.; Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system. J Appl Phys 1996,80(10),5809-5814