Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327583
Reference15 articles.
1. THE PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS
2. Anneal behavior of defects in lon-lmplanted GaAs diodes
3. Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide
4. Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K
5. Diffusion of Defects in Low Temperature Ion Implanted GaAs
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1. Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition;Applied Physics Letters;1997-01-27
2. Photothermal deflection spectroscopy study of defects in semi-insulating GaAs;Applied Physics A Solids and Surfaces;1991-02
3. Characterization ofn‐type regions in GaAs formed by silicon fluoride molecular ion implantations;Journal of Applied Physics;1989-11
4. Cathodoluminescence Characterization of Semiconductors;SEM Microcharacterization of Semiconductors;1989
5. Cathodoluminescence scanning electron microscopy of semiconductors;Journal of Applied Physics;1986-02-15
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