Electrical and chemical characteristics of probe-induced two-dimensional SiOx protrusion layers-Reference-Cited by-同舟云学术

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Electrical and chemical characteristics of probe-induced two-dimensional SiOx protrusion layers

Published:2013-01-21 Issue:3 Volume:102 Page:031603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Jin-Han,Chiu Hsien-Che,Lin Yu-Rong,Wen Teng-Kai,Patil Ranjit A.,Devan Rupesh S.,Chen Chia-Hao,Shiu Hung-Wei,Liou Yung,Ma Yuan-Ron

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4776696

Reference29 articles.

1. New Semiconductor Devices

2. Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling

3. Oxide reliability below 3nm for advanced CMOS: Issues, characterization, and solutions

4. Analysis of photogenerated random telegraph signal in single electron detector (photo-SET)

5. The electronic structure at the atomic scale of ultrathin gate oxides

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3. SiOx films deposited by HFCVD: Their conduction response to light and intrinsic photovoltaic effect;Surfaces and Interfaces;2021-10

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