In-situ thermal stability analysis of amorphous Si-doped carbon films-Reference-Cited by-同舟云学术

In-situ thermal stability analysis of amorphous Si-doped carbon films

Published:2021-10 Issue: Volume:184 Page:772-785
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Rouhani Mehdi,Hobley Jonathan^ORCID,Chau-Nan Hong Franklin,Jeng Yeau-Ren^ORCID

Funder

National Cheng Kung University

Intelligent Manufacturing Research Center

Ministry of Science and Technology, Taiwan

Öterreichisches Exzellenzzentrum für Tribologie

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

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4. Effect of the addition of nitrogen gas and annealing on the electrical properties of DLC films deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD);Choi;J. Ceram. Process. Res.,2007

5. Doping and alloying effects on DLC coatings;Sánchez-López,2008

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