M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2894509
Reference14 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes
3. High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes
4. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
5. Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates
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