Optical and structural studies of homoepitaxially grown m-plane GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4706258
Reference24 articles.
1. Nitrides with Nonpolar Surfaces
2. Nonpolar and Semipolar Group III Nitride-Based Materials
3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
4. Reduction of stacking fault density in m-plane GaN grown on SiC
5. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates
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