Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy-Reference-Cited by-同舟云学术

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Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

Published:2016-07-25 Issue:4 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Duc Tran Thien,Pozina Galia,Amano Hiroshi,Monemar Bo,Janzén Erik,Hemmingsson Carl

Funder

Forskningsrådet om Hälsa, Arbetsliv och Välfärd

Energimyndigheten

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.045206/fulltext

Reference50 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

3. High doping level in Mg-doped GaN layers grown at low temperature

4. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

5. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

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1. Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window;IEEE Transactions on Electron Devices;2024-06

2. Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation;Applied Physics Letters;2024-04-22

3. Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy;Journal of Semiconductors;2024-03-01

4. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

5. Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation;Applied Physics Letters;2023-01-09

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