Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356304
Reference39 articles.
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2. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
3. High‐brightness InGaAlP green light‐emitting diodes
4. High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In0.62Ga0.38P active layer
5. High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
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1. Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism;Physical Review B;2016-06-09
2. Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy;Journal of Applied Physics;2006-11
3. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine;Journal of Materials Science;2006-10-20
4. Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation;Journal of Crystal Growth;2004-05
5. Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP;Journal of Materials Science;2003
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