Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3573789
Reference31 articles.
1. Physics and characteristics of high performance 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well lasers obtained by metal–organic chemical vapour deposition
2. MOCVD-Grown Dilute Nitride Type II Quantum Wells
3. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
4. Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials
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1. Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs;Journal of Applied Physics;2019-10-14
2. Effect of N interstitial complexes on the electronic properties of GaAs1−xNx alloys from first principles;Physical Review Materials;2019-02-19
3. Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure;Scientific Reports;2018-04-13
4. Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques;Applied Surface Science;2018-03
5. Annihilation of arsenic-nitrogen bonding defects in annealed InAs1−xNx quantum dots grown through nitrogen background pressure–controlled SS-MBE;Journal of Alloys and Compounds;2017-10
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