1. Ed. Henini, M. Dilute Nitride Semiconductors. (Elsevier, Amsterdam, 2005).
2. Ed. Buyanova, I. A. & Chen, W. M. Physics and Applications of Dilute Nitrides. (Taylor and Francis, New York, 2004).
3. Tansu, N., Yeh, J. Y. & Mawst, L. J. Physics and characteristics of high performance 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition. J. Phys.: Condens. Matter 16, S3277–S3318 (2004).
4. Mawst, L. J. et al. MOCVD-grown dilute nitride type II quantum wells. IEEE J. Sel. Topics Quantum Electron. 14, 979–991 (2008).
5. Langer, F., Perl, S., Höfling, S. & Kamp, M. Graded band gap GaInNAs solar cells. Appl. Phys. Lett. 106, 233902-1-6 (2015).