Dislocation loops in silicon-germanium alloys: The source of interstitials
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2123389
Reference24 articles.
1. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. Implantation and transient boron diffusion: the role of the silicon self-interstitial
4. P. Packan, Ph. D. thesis, Stanford University, Palo Alto, CA, 1991.
5. Residual damage in B+ and –implanted Si
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