Residual damage in B+ and –implanted Si

Abstract

The residual damage left after furnace-annealing Si wafers implanted with 30-keV B+ or 120-keV [Formula: see text] ions has been investigated for doses of 3–5 × 1015 ions∙cm−2. Transmission electron microscopy, Rutherford backscattering, and channeling were used to study the morphology and distribution of the damage while the B and F content and their depth distributions were determined by nuclear reaction analysis and secondary-ion mass spectrometry. For B+-implanted samples the residual damage is concentrated in a band at a depth corresponding to the B projected range. For [Formula: see text]-implanted samples the residual damage is located mainly in the region of the as-implanted amorphous–crystalline interface.