Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973493
Reference21 articles.
1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2. Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique
3. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
4. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
5. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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3. Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2023-05-23
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