Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2424668
Reference20 articles.
1. High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
4. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
5. 250nmAlGaN light-emitting diodes
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