Impurity and defect interactions during laser thermal annealing in Ge-Reference-Cited by-同舟云学术

Impurity and defect interactions during laser thermal annealing in Ge

Published:2016-01-28 Issue:4 Volume:119 Page:045702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Milazzo R.¹^ORCID,Impellizzeri G.²,Piccinotti D.¹³^ORCID,La Magna A.⁴,Fortunato G.⁵,De Salvador D.¹,Carnera A.¹,Portavoce A.³,Mangelinck D.³,Privitera V.²^ORCID,Napolitani E.¹^ORCID

Affiliation:

1. CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova, Italy

2. CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy

3. IM2NP, CNRS-Universités d'Aix-Marseille et de Toulon, Case 142, 13397 Marseille Cedex 20, France

4. CNR-IMM, Z.I. VIII Strada 5, 95121 Catania, Italy

5. CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma, Italy

Funder

Centre National de la Recherche Scientifique (CNRS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4940737

Reference36 articles.

1. Ion-implantation issues in the formation of shallow junctions in germanium

2. Silicon-Silicon Dioxide Surface Device

3. Stabilization of Silicon Surfaces by Thermally Grown Oxides*

4. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

5. Academic and industry research progress in germanium nanodevices

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