A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range

Author:

Son Bongkwon12,Shin Sang-Ho1,Jin Yuhao1,Liao Yikai1,Zhao Zhi-Jun3,Jeong Jun-Ho3ORCID,Wang Qi Jie1ORCID,Wang Xincai2ORCID,Tan Chuan Seng14,Kim Munho1ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore

2. Singapore Institute of Manufacturing Technology (SIMTech), A*STAR, 2 Fusionopolis Way, #08-04, Innovis, 138634, Singapore

3. Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery and Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon 34103, South Korea

4. Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 138602, Singapore

Abstract

A highly ordered microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. Doping in the structure significantly modifies the reflection behavior in the mid-infrared region.

Funder

National Research Foundation Singapore

Agency for Science, Technology and Research

Nanyang Technological University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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