Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers-Reference-Cited by-同舟云学术

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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Published:2003-09-15 Issue:11 Volume:83 Page:2271-2273
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Irokawa Y.,Luo B.,Kim Jihyun,LaRoche J. R.,Ren F.,Baik K. H.,Pearton S. J.,Pan C.-C.,Chen G.-T.,Chyi J.-I.,Park S. S.,Park Y. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1611624

Reference22 articles.

1. 4H-SiC power devices for use in power electronic motor control

2. GaN based transistors for high power applications

3. Performance evaluation of high-power wide band-gap semiconductor rectifiers

4. High voltage GaN Schottky rectifiers

5. High voltage (450 V) GaN Schottky rectifiers

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4. Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer;Applied Physics A;2016-11-21

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