Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress-Reference-Cited by-同舟云学术

Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

Published:2020-04-20 Issue:16 Volume:116 Page:163505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Paxinos Kosta¹,Antoniou Giorgos¹,Afouxenidis Dimitrios¹,Mohamed Ahmed¹,Dikko Umar¹,Tsitsimpelis Ioannis¹,Milne William I.²,Nathan Arokia²³,Adamopoulos George¹^ORCID

Affiliation:

1. Department of Engineering, Lancaster University, Lancaster LA1 4YR, United Kingdom

2. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

3. Cambridge Touch Technologies, 154 Cambridge Science Park Milton Road, Cambridge CB4 0GN, United Kingdom

Funder

Royal Academy of Engineering

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142699

Reference47 articles.

1. Electrical Properties of Single Crystals of Indium Oxide

2. Optical Properties of Indium Oxide

3. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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