Thermally stimulated current method applied on diodes with high concentration of deep trapping levels
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1335852
Reference4 articles.
1. Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer
2. Analysis of TSC spectra measured on silicon pad detectors after exposure to fast neutrons
3. Correlation between a deep hole trap and the reverse annealing effect in neutron-irradiated silicon detectors
4. On the determination of deep level center energy and concentration by thermally stimulated conductivity measurements using reverse-biased p-n junctions
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