Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1629803
Reference16 articles.
1. Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
2. Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s
3. A Quantum Dot Single-Photon Turnstile Device
4. Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots
5. Strain-induced material intermixing of InAs quantum dots in GaAs
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1. Strain compensation in a semiconducting device structure using an intentionally mismatched uniform buffer layer;Semiconductor Science and Technology;2016-11-03
2. Impact of alloyed capping layers on the performance of InAs quantum dot solar cells;Solar Energy Materials and Solar Cells;2016-01
3. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing;Journal of Alloys and Compounds;2016-01
4. Quantum-Dot Lasers: Physics and Applications;Reference Module in Materials Science and Materials Engineering;2016
5. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics;Applied Physics Letters;2014-07-28
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