Impact of alloyed capping layers on the performance of InAs quantum dot solar cells-Reference-Cited by-同舟云学术

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Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

Published:2016-01 Issue: Volume:144 Page:128-135
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Utrilla A.D.,Ulloa J.M.,Gačević Ž.,Reyes D.F.,Artacho I.,Ben T.,González D.,Hierro A.,Guzman A.

Funder

Spanish MICINN-MINECO

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Detailed balance limit of efficiency of p–n junction solar cells;Shockley;J. Appl. Phys.,1961

2. Band-band impact ionization and solar cell efficiency;Landsberg;J. Appl. Phys.,1993

3. Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots;Nozik;Annu. Rev. Phys. Chem.,2001

4. Comparing multiple exciton generation in quantum dots to impact ionization in bulk semiconductors: implications for enhancement of solar energy conversion;Beard;Nano Lett.,2010

5. Peak external photocurrent quantum efficiency exceeding 100% via MEG in a quantum dot solar cell;Semonin;Science,2011

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1. Antimony composition impact on band alignment in InAs/GaAsSb quantum dots;Solid State Communications;2024-11

2. A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures;Heliyon;2024-07

3. Comparative study of photoluminescence for type-I InAs/GaAs0.89Sb0.11 and type-II InAs/GaAs0.85Sb0.15 quantum dots;Optical Materials;2019-12

4. Quantum engineering of intrinsic losses in the diluted nitride InAsN quantum dot intermediate band solar cell;Journal of Photonics for Energy;2019-10-30

5. Broad tunability of emission wavelength by strain coupled InAs/GaAs1 − xSbx quantum dot heterostructures;Journal of Applied Physics;2019-10-21

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