GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891557
Reference21 articles.
1. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
2. Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
3. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
4. Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
5. Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
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1. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots;Nanomaterials;2024-02-17
2. Effects of In, Sb and N Alloyed Capping on the Electronic Band Structures of Vertically Coupled InAs SK-SML Quantum Dot System;IEEE Transactions on Nanotechnology;2021
3. Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications;Nanoscale Research Letters;2019-12
4. Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition;Beilstein Journal of Nanotechnology;2018-11-02
5. Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers;Applied Physics Letters;2018-09-03
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