Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2741608
Reference22 articles.
1. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
2. InAs/GaAs quantum dots optically active at 1.5 μm
3. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
4. High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
5. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
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