Γ–L–X mixed symmetry of nitrogen-induced states in GaAs1−xNx probed by resonant Raman scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1399010
Reference19 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Electronic structure and phase stability ofGaAs1−xNxalloys
3. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
4. Band Anticrossing in GaInNAs Alloys
5. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
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