Rhombohedral symmetry in GaAs1− x N x nanostructures
Author:
Funder
Consejo Nacional de Ciencia y Tecnología
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/abe319/pdf
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5. Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy;Odnoblyudov;Semiconductors,2001
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