Study on the oxygen vacancy redistribution and the mechanism of electrical manipulation of ferromagnetism in diluted magnetic oxides-Reference-Cited by-同舟云学术

Study on the oxygen vacancy redistribution and the mechanism of electrical manipulation of ferromagnetism in diluted magnetic oxides

Published:2015-12-21 Issue:23 Volume:118 Page:233902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ren Shuxia¹²,Dong Jingyu¹,Chen Wei¹,Zhang Liyong¹,Guo Jiajun¹,Zhang Li¹,Zhao Jing¹,Zhao Xu¹

Affiliation:

1. Key Laboratory of Advanced Films of Hebei Province, College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024, China

2. School of Material Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937585

Reference46 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co- or Ni-Doped ZnO

3. Unexpected magnetism in a dielectric oxide

4. Magnetic coupling and electric conduction in oxide diluted magnetic semiconductors

5. Oxygen vacancy effect on room-temperature ferromagnetism of rutile Co:TiO2 thin films

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