Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors-Reference-Cited by-同舟云学术

Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

Published:2000-02-11 Issue:5455 Volume:287 Page:1019-1022
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Dietl T.¹²,Ohno H.¹,Matsukura F.¹,Cibert J.³,Ferrand D.³

Affiliation:

1. Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan.

2. Institute of Physics and College of Science, Polish Academy of Sciences, al. Lotników 32/46, PL-02668 Warsaw, Poland.

3. Laboratoire de Spectrométrie Physique, Université Joseph Fourier Grenoble 1-CNRS (UMR 5588), F-38402 Saint Martin d'Hères Cedex, France.

Abstract

Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature ( T C ) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T C of Ga 1− x Mn x As and that of its II-VI counterpart Zn 1− x Mn x Te and is used to predict materials with T C exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference46 articles.

1. See for example S. Das Sarma and A. Pinczuk Eds. Perspectives in Quantum Hall Effects (Wiley New York 1997); J. Rarity and C. Weisbuch Microcavities and Photonic Bandgaps: Physics and Applications (Kluwer Dordrecht Netherlands 1996);

2. Julien F. H., Alexandrou A., Science 282, 1429 (1998).

3. and references therein.

4. Ohno H., Munekata H., Penney T., von Molnár S., Chang L. L., Phys. Rev. Lett. 68, 2664 (1992).

5. H. Ohno et al. in Proceedings 23rd International Conference on Physics of Semiconductors (World Scientific Singapore 1996) pp. 405–408;

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