Quantum conductance and magnetic properties in ZnO based resistive switching memory-Reference-Cited by-同舟云学术

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Quantum conductance and magnetic properties in ZnO based resistive switching memory

Published:2016-12 Issue: Volume:689 Page:800-804
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ren Shuxia,Guo Jiajun,Zhang Li,Zhao Xu,Chen Wei

Funder

Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference35 articles.

1. Resistive switching in transition metal oxides;Sawa;Mater. Today,2008

2. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007

3. Memory materials: a unifying description;Di Ventra;Mater. Today,2011

4. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition;Zhang;Appl. Phys. Lett.,2013

5. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook;Kim;Nanotechnology,2011

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1. Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications;Journal of Alloys and Compounds;2022-07

2. Demonstration of Enhanced Switching Variability and Conductance Quantization Properties in a SiO₂ Conducting Bridge Resistive Memory with Embedded Two-Dimensional MoS₂ Material;ACS Applied Electronic Materials;2022-05-20

3. Conductance quantization control and neuromorphic properties in Pt-nanoparticle incorporated HfAlOx alloy memristor;Applied Physics Letters;2021-11-29

4. Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors;Journal of Alloys and Compounds;2020-05

5. Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb:SrTiO3 heterojunction;Journal of Physics D: Applied Physics;2017-09-15

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