Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb:SrTiO3 heterojunction-Reference-Cited by-同舟云学术

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Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb:SrTiO3 heterojunction

Published:2017-09-15 Issue:40 Volume:50 Page:405111
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Ren Yong,Li Jiachen,Zhang Weifeng,Jia Caihong

Funder

Key scientific research projects of Henan Province

National Natural Science Foundation of China

Natural Science Foundation of Henan Province

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa867b/pdf

Reference28 articles.

1. Memristive devices for computing

2. Resistive switching behavior in Pt/YSZ/Nb:SrTiO3 heterostructure for nonvolatile multilevel memories

3. Fabrication and transport properties of ZnO∕Nb-1 wt %-doped SrTiO[sub 3] epitaxial heterojunctions

4. Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3:Nb/ZnO heterojunctions

5. Structural and optical properties of ZnO and manganese-doped ZnO

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1. Control of resistive switching type in BaTiO3 thin films grown by high and low laser fluence;Applied Physics Letters;2023-06-05

2. La-doped BiFeO3 junction based random access multilevel nonvolatile memory;Microelectronic Engineering;2023-01

3. Synthesis of titanium dioxide TiO2 thin film to achieve resistive switching property for the application of nonvolatile memory;Materials Today: Proceedings;2021

4. Light-induced double enhancement of resistive switching and control of ferromagnetism in ZnO film;Materials Research Express;2019-07-17

5. Highly reliable multilevel resistive switching in a nanoparticulated In2O3 thin-film memristive device;Journal of Physics D: Applied Physics;2019-02-21

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